Third-generation semiconductors primarily consist of wide bandgap semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN). Due to the combination of these two materials, these semiconductors are also referred to as "compound semiconductors." In response to global demands for low-carbon transformation and high-speed wireless transmission, third-generation semiconductor products, with their superior material properties, have garnered significant global attention for their potential to enhance energy efficiency and next-generation mobile communications. Taiwan, as an emerging player in the third-generation semiconductor market, is drawing increasing interest. This report provides an overview of the development of Taiwan's third-generation semiconductor industry, explores future trends, and examines the development strategies of key players, including SAS, Foxconn, and Panjit.