In recent years, there has been a notable surge in market attention directed towards third-generation semiconductors, particularly Silicon Carbide (SiC). This heightened interest is primarily attributed to the unique characteristics of SiC, including its capability to withstand higher voltages and temperatures, provide enhanced power conversion efficiency, and achieve superior transmission efficiency at high frequencies. These attributes position SiC as an ideal choice for various applications, including electric vehicles (EV), renewable energy, optoelectronics, satellite communications, national defense, and military applications. Furthermore, the challenging acquisition of SiC materials has prompted several countries to recognize upstream crystal growth materials as crucial strategic resources within their national semiconductor strategies. This report provides an in-depth analysis and overview of SiC industry policies in Japan, Korea, and China, along with a concise examination of SiC's future development trends in major countries: the United States, the European Union (EU), Japan, Korea, and China.