Taiwanese semiconductor foundry UMC announced on October 27 that it has successfully manufactured fully functional 28nm SRAM (Static Random Access Memory) chips using the company's own-developed low-leakage process technology, according to Taiwan's Commercial Times.

UMC's 28nm SRAM chip consists of six-transistor SRAM cells measuring 0.122 square microns in size and utilizes advanced double-patterning immersion lithography and strained silicon technology for its production. UMC also announced a dual approach for the 28nm technology catering to different applications: one is the silicon gate/SiON (Silicon-Oxy-Nitride) gate technology suitable for portable applications such as mobile phone ICs, and the other HKMG (High-K/Metal Gate) stack for applications with high speed requirements, such as graphic and application processors as well as high-speed communication ICs.

UMC's 28nm SRAM process is reportedly capable of achieving twice the density of the 40nm process. The company also plans to offer customized 32nm foundry services based on the 28nm process platform.