IBM, TDK Initiate Four-year MRAM R&D Project
August 24, 2007
IBM and TDK, Japan-based maker of magnetic materials, recently announced a joint R&D project to develop high-capacity MRAMs (Magnetoresistive Random Access Memory) based on spin torque transfer writing technology. The joint project is expected to run for four years and aims to enhance the memory density of MRAMs twentyfold, according to an EE Times report.